TTA1452B
Bipolar Transistors
Silicon PNP Epitaxial Type
TTA1452B
1. Applications
•
High-Current Switching
2. Features
(1)
Low collector-emitter saturation voltage: VCE(sat) = -0.4 V (max) (IC = -6 A , IB = -0.3 A)
(2)
High speed switching: tstg = 1 µs (typ.)
(3)
Complementary to TTC3710B
3. Packaging and Internal Circuit
1. Base
2. Collector
3. Emitter
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-80
V
Collector-emitter voltage
VCEO
-80
Emitter-base voltage
VEBO
-6
Collector current (DC)
(Note 1)
IC
-12
Collector current (pulsed)
(Note 1)
ICP
-15
Base current
IB
-2
Collector power dissipation
PC
2
Collector power dissipation
(Tc = 25 )
A
W
PC
30
Tj
150
Storage temperature
Tstg
-55 to 150
Mounting torque
TOR
0.6
Junction temperature
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150 .
Start of commercial production
©2015 Toshiba Corporation
1
2012-09
2015-08-06
Rev.4.0
