2SA1163
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1163
Audio Frequency General Purpose Amplifier Applications
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Unit: mm
High voltage: VCEO = −120 V
Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)
= 0.95 (typ.)
High hFE: hFE = 200~700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC2713
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−120
V
Collector-emitter voltage
VCEO
−120
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−100
mA
Base current
IB
−20
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Tstg
−55~125
°C
Storage temperature range
JEDEC
TO-236MOD
JEITA
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-3F1A
temperature, etc.) may cause this product to decrease in the
Weight: 0.012 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −120 V, IE = 0
⎯
⎯
−0.1
μA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
⎯
⎯
−0.1
μA
200
⎯
700
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
hFE
(Note)
VCE = −6 V, IC = −2 mA
VCE (sat)
IC = −10 mA, IB = −1 mA
⎯
⎯
−0.3
V
fT
VCE = −6 V, IC = −1 mA
⎯
100
⎯
MHz
Cob
VCB = −10 V, IE = 0, f = 1 MHz
⎯
4
⎯
pF
NF
VCE = −6 V, IC = −0.1 mA, f = 1 kHz,
Rg = 10 kΩ,
⎯
1.0
10
dB
Note: hFE classification GR (G): 200~400, BL (L): 350~700
( ) marking symbol
Marking
1
2007-11-01