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部品型式

2SA1162GR

製品説明
仕様・特性

2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: Unit: mm VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC2712 • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −150 mA Base current IB −30 mA Collector power dissipation PC 150 mW Tj 125 °C Tstg −55 to 125 °C Junction temperature Storage temperature range JEDEC TO-236MOD JEITA SC-59 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-3F1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.012 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −0.1 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −0.1 μA DC current gain hFE VCE = −6 V, IC = −2 mA (Note) 70 ⎯ 400 IC = −100 mA, IB = −10 mA ⎯ −0.1 −0.3 V VCE = −10 V, IC = −1 mA 80 ⎯ ⎯ MHz Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 4 7 pF NF VCE = −6 V, IC = −0.1 mA, f = 1 kHz, Rg = 10 kΩ, ⎯ 1.0 10 dB Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Note: hFE classification VCE (sat) fT O (O): 70 to 140, Y (Y): 120 to 240, GR (G): 200 to 400, ( ) marking symbol Marking Start of commercial production 1982-12 1 2014-03-01

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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