FDS5170N7
60V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
• 10.6 A, 60 V. RDS(ON) = 12 mΩ @ VGS = 10 V
Applications
• High power and current handling capability
• Synchronous rectifier
• Fast switching, low gate charge (51nC typical)
RDS(ON) = 15 mΩ @ VGS = 6.0 V
• High performance trench technology for extremely
low RDS(ON)
• DC/DC converter
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
5
Bottom-side
Drain Contact
4
6
7
Symbol
2
8
Absolute Maximum Ratings
3
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
60
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
10.6
A
– Continuous
(Note 1a)
– Pulsed
50
3.0
W
–55 to +150
°C
(Note 1a)
40
°C/W
(Note 1)
0.5
PD
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 1a)
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS5170N7
FDS5170N7
13’’
12mm
2500 units
2002 Fairchild Semiconductor Corporation
FDS5170N7 Rev C1(W)
FDS5170N7
May 2003
FDS5170N7
Dimensional Outline and Pad Layout
FDS5170N7 Rev C1(W)
