FDS5690
60V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
•
7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V
RDS(on) = 0.033 Ω @ VGS = 6 V.
•
Low gate charge (23nC typical).
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
•
Fast switching speed.
•
High performance trench technology for extremely
low RDS(ON).
Applications
•
High power and current handling capability.
•
•
DC/DC converter
Motor drives
D
D
5
SO-8
S
S
S
2
8
1
G
Absolute Maximum Ratings
Symbol
3
7
D
4
6
D
TA = 25°C unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
V
ID
Drain Current
±20
7
- Continuous
(Note 1a)
- Pulsed
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, Tstg
A
50
Operating and Storage Junction Temperature Range
W
1
-55 to +150
°C
°C/W
°C/W
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS5690
FDS5690
13’’
12mm
2500 units
2000 Fairchild Semiconductor Corporation
FDS5690 Rev. C
FDS5690
March 2000
FDS5690
Typical Characteristics
50
2
VGS = 10V
6.0V
40
1.8
5.0V
1.6
4.5V
30
VGS = 4.0V
4.5V
1.4
5.0V
20
1.2
4.0V
6.0V
7.0V
10V
10
1
3.5V
0.8
0
0
1
2
3
4
5
0
6
10
20
30
40
50
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
2
0.07
ID = 7A
VGS = 10V
1.8
ID = 3.5A
0.06
1.6
0.05
1.4
o
TA = 125 C
0.04
1.2
0.03
1
0.8
0.02
0.6
0.01
0.4
o
TA = 25 C
0
-50
-25
0
25
50
75
100
125
150
3
4
5
o
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
50
VGS = 0V
VDS = 5V
o
o
25 C
TA = -55 C
40
10
o
o
TA = 125 C
125 C
1
o
25 C
30
o
0.1
-55 C
20
0.01
10
0.001
0.0001
0
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS5690 Rev. C
