FDS6675A
30V P-Channel PowerTrench MOSFET
General Description
Features
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 25V).
• –11 A, –30 V
Applications
• Fast switching speed
• Power management
• High performance trench technology for extremely
low RDS(ON)
RDS(ON) = 13 mΩ @ VGS = –10 V
RDS(ON) = 19 mΩ @ VGS = –4.5 V
• Low gate charge
• Load switch
• Battery protection
• High power and current handling capability
DD
D
D
5
6
G
S G
S
S
S S
S
SO-8
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
3
2
8
D
D
4
7
D
D
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
–30
V
VGSS
Gate-Source Voltage
±25
V
ID
Drain Current
–11
A
– Continuous
(Note 1a)
– Pulsed
–50
Power Dissipation for Single Operation
2.5
1.2
(Note 1c)
TJ, TSTG
(Note 1a)
(Note 1b)
PD
1
Operating and Storage Junction Temperature Range
–55 to +175
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6675A
FDS6675A
13’’
12mm
2500 units
2003 Fairchild Semiconductor Corporation
FDS6675A Rev C (W)
FDS6675A
February 2003
FDS6675A
Typical Characteristics
50
2.4
-4.5V -4.0V
40
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -10V
-6.0V
-3.5V
30
-3.0V
20
10
0
2.2
VGS = - 3.5V
2
1.8
-4.0V
1.6
-4.5V
1.4
-6.0V
1.2
1
-10V
0.8
0
0.5
1
1.5
2
2.5
0
10
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
50
0.05
ID = -11A
VGS = - 10V
1.6
ID = -5.5A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
40
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.4
1.2
1
0.8
0.6
0.04
0.03
TA = 125oC
0.02
TA = 25oC
0.01
0
-50
-25
0
25
50
75
100
125
150
175
2
4
TJ, JUNCTION TEMPERATURE (oC)
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
TA = -55oC
25oC
-IS, REVERSE DRAIN CURRENT (A)
VDS = -10V
-ID, DRAIN CURRENT (A)
30
-ID, DRAIN CURRENT (A)
40
125oC
30
20
10
0
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
1
1.5
2
2.5
3
3.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6675A Rev C (W)
