FDS6672A
30V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 12.5 A, 30 V. RDS(ON) = 8 mΩ @ VGS = 10 V
RDS(ON) = 9.5 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
Applications
• Low gate charge (33 nC typical)
• DC/DC converter
• High power and current handling capability
D
D
D
5
6
SO-8
S
S
S
Absolute Maximum Ratings
Symbol
2
8
G
3
7
D
4
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
12.5
A
– Continuous
(Note 1a)
– Pulsed
50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
PD
1.2
(Note 1c)
TJ, TSTG
W
1.0
-55 to +150
°C
(Note 1a)
50
°C/W
(Note 1)
25
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6672A
FDS6672A
13’’
12mm
2500 units
2000 Fairchild Semiconductor Corporation
FDS6672A Rev C(W)
FDS6672A
April 2001
FDS6672A
Typical Characteristics
50
1.5
ID, DRAIN CURRENT (A)
3.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 4.5V
3.0V
40
2.5V
30
2.0V
20
10
VGS = 2.5V
1.3
3.0V
1.1
3.5V
4.0V
4.5V
0.9
0
0
0.5
1
0
1.5
10
20
Figure 1. On-Region Characteristics.
50
60
0.025
ID = 15A
VGS = 10V
1.6
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
40
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
ID = 6 A
0.02
0.015
TA = 125oC
0.01
TA = 25oC
0.005
0
150
0
2
TJ, JUNCTION TEMPERATURE (oC)
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
IS, REVERSE DRAIN CURRENT (A)
60
VDS = 5V
ID, DRAIN CURRENT (A)
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
45
30
TA = 125oC
25oC
15
-55oC
VGS = 0V
10
TA = 125oC
1
25oC
-55oC
0.1
0.01
0.001
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6672A Rev C(W)
