TPC6110
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC6110
Power Management Switch Applications
Unit: mm
•
Small footprint due to small and thin package
•
Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.)
•
Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
•
Enhancement mode: Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −0.1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−30
V
Gate-source voltage
VGSS
−25/+20
V
DC
(Note 1)
ID
−4.5
Pulse
(Note 1)
IDP
−18
Drain power dissipation
(t = 5 s)
(Note 2a)
PD
2.2
W
Drain power dissipation
(t = 5 s)
(Note 2b)
PD
0.7
W
TOSHIBA
Single pulse avalanche energy (Note 3)
EAS
3.4
mJ
Weight: 0.011 g (typ.)
Avalanche current
IAR
−2.3
A
EAR
0.025
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
Repetitive avalanche energy
(Note 4)
A
JEDEC
―
JEITA
―
2-3T1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Rth (ch-a)
56.8
Rth (ch-a)
178.5
5
4
1
2
3
°C/W
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
6
°C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See other pages.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Start of commercial production
2009-08
1
2013-11-01
