TPC6103
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (U-MOS III)
TPC6103
Notebook PC Applications
Portable Equipment Applications
Unit: mm
•
Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 13 S (typ.)
•
Low leakage current: IDSS = −10 μA (max) (VDS = −12 V)
•
Enhancement mode: Vth = −0.5 to −1.2 V
(VDS = −10 V, ID = −200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−12
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−12
V
Gate-source voltage
VGSS
±8
V
(Note 1)
ID
−5.5
Pulse (Note 1)
IDP
−22
Drain power dissipation
(t = 5 s)
(Note 2a)
PD
2.2
W
Drain power dissipation
(t = 5 s)
(Note 2b)
PD
0.7
W
Single pulse avalanche energy
(Note 3)
EAS
5.3
mJ
Avalanche current
IAR
−2.75
A
Repetitive avalanche energy (Note 4)
EAR
0.22
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
DC
A
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to
ambient (t = 5 s)
(Note 2a)
Rth (ch-a)
56.8
Rth (ch-a)
178.5
5
4
1
2
3
°C/W
Thermal resistance, channel to
ambient (t = 5 s)
(Note 2b)
6
°C/W
Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the third page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2009-09-29
