CPH6311
Ordering number : EN6794A
SANYO Semiconductors
DATA SHEET
CPH6311
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--20
Gate-to-Source Voltage
VGSS
±10
V
--5
A
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
V
PW≤10µs, duty cycle≤1%
--20
A
Mounted on a ceramic board (900mm2✕0.8mm)
1.6
W
Allowable Power Dissipation
PD
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Mounted on a FR4 board PW≤5S
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : JM
Symbol
V(BR)DSS
IDSS
IGSS
Conditions
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS(off)
yfs
VGS=±8V, VDS=0V
VDS=--10V, ID=- 1mA
VDS=--10V, ID=--3A
RDS(on)1
RDS(on)2
ID=--3A, VGS=--4.5V
ID=--1A, VGS=--2.5V
Ratings
min
typ
Unit
max
--20
V
--1
±10
5.8
µA
--1.4
--0.4
µA
V
8.5
S
32
42
mΩ
46
60
mΩ
Continued on next page.
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the performance, characteristics, and functions of the described products in the independent state, and are not
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32807PE TI IM TC-00000618 / D2500 TS IM TA-3168 No.6794-1/4
