Features
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Single Voltage Range, 3V to 3.6V Supply
3-volt Only Read and Write Operation
Software Protected Programming
Fast Read Access Time - 150 ns
Low Power Dissipation
– 15 mA Active Current
– 50 µA CMOS Standby Current
Sector Program Operation
– Single-cycle Reprogram (Erase and Program)
– 512 Sectors (128 words/sector)
– Internal Address and Data Latches for 128 Words
Fast Sector Program Cycle Time - 20 ms
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
1-megabit
(64K x 16)
3-volt Only
Flash Memory
Description
The AT29LV1024 is a 3-volt only in-system Flash programmable and erasable read
only memory (PEROM). Its 1 megabit of memory is organized as 65,536 words by 16
bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 150 ns with power dissipation of just 54 mW. When the device
is deselected, the CMOS standby current is less than 50 µA. The device endurance is
(continued)
Pin Configurations
AT29LV1024
Not Recommended
for New Design
Contact Atmel to discuss
the latest design in trends
and options
TSOP Top View
Type 1
Pin Name
Function
A0 - A15
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O15
Data Inputs/Outputs
NC
No Connect
DC
Don’t Connect
39
38
37
36
35
34
33
32
31
30
29
18
19
20
21
22
23
24
25
26
27
28
7
8
9
10
11
12
13
14
15
16
17
A13
A12
A11
A10
A9
GND
NC
A8
A7
A6
A5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
NC
OE
O0
O1
O2
O3
O4
NC
O5
O6
O7
VSS
O8
O9
O10
NC
O11
O12
O13
O14
O15
CE
NC
NC
Rev. 0564B–01/00
I/O3
I/O2
I/O1
I/O0
OE
DC
A0
A1
A2
A3
A4
I/O12
I/O11
I/O10
I/O9
I/O8
GND
NC
I/O7
I/O6
I/O5
I/O4
6
5
4
3
2
1
44
43
42
41
40
I/O13
I/O14
I/O15
CE
NC
NC
VCC
WE
NC
A15
A14
PLCC Top View
NC
A0
A1
A2
A3
A4
A5
NC
A6
A7
A8
VSS
A9
A10
A11
NC
A12
A13
A14
A15
NC
WE
VCC
NC
1