TG2211AFT
TOSHIBA GaAs Linear Integrated Circuit
GaAs Monolithic
TG2211AFT
RF SPDT Switch
Antenna switch for Bluetooth class 2 and 3
Antenna switch for diversity
Switch for receive filters for mobile handsets
Switch for local signals
Features
•
Small external circuit : Built-in inverter
•
Low insertion loss
: Loss = 0.45dB (typ.) @1.0 GHz
•
High isolation
: ISL = 25dB (typ.) @1.0 GHz
•
Low voltage operation: VDD = VC (Hi) = 2.4 V (min.)
•
Small package
Weight: 0.0045 g (typ.)
: SSOP6-P-0.65 (TU6) package
(2.0 mm × 2.1 mm × 0.6 mm)
Pin Configuration and Marking (top view)
VC
6
RFcom
5
VC
6
2
GND
RFcom
5
VDD
4
1
RF1
VDD
4
WU
1
RF1
Equivalent Circuit
2
GND
3
RF2
Monthly dot marking
3
RF2
Maximum Ratings (Ta = 25°C, Zg = Zl = 50 Ω)
Characteristic
Symbol
Conditions
Rating
Unit
Pi ≤ 15 dBmW
−0.5 (min.) / 6 (max.)
V
−0.5 (min.) / 6 (max.)
V
Supply voltage
VDD
Control voltage
VC
Pi ≤ 15 dBmW, VC − VDD ≤ 1.5 V
Input power
Pi
VDD = 2.4 ~ 2.7 V, VC = −0.2 ~ 3.3 V
25
dBmW
Total power dissipation
PD
(Note 1)
250
mW
Operating temperature range
Topr
⎯
−40 ~ 85
°C
Storage temperature range
Tstg
⎯
−55 ~ 150
°C
Note 1: When mounted on a 20 mm × 24 mm × 0.4 mm double-sided Teflon printed circuit board (the entire reverse side is a
ground connection) at Ta = 25°C.
Caution
This product is a Lead (Pb)-free article.
This device is sensitive to electrostatic discharge. When handling this product, ensure that the environment is
protected against electrostatic discharge by using an earth strap, a conductive mat and an ionizer.
See Note 5 for the power supply sequencing requirement.
1
2005-08-02