FDS2670
200V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
• 3.0 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V
• Low gate charge
• Fast switching speed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
• High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
D
• High power and current handling capability
D
5
6
SO-8
S
S
S
2
1
G
Absolute Maximum Ratings
Symbol
3
8
D
4
7
D
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
200
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
3.0
A
– Continuous
(Note 1a)
– Pulsed
PD
20
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
(Note 1c)
W
1.2
1.0
dv/dt
Peak Diode Recovery dv/dt
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 3)
3.2
V/ns
−55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS2670
FDS2670
13’’
12mm
2500 units
2001 Fairchild Semiconductor Corporation
FDS2670 Rev C1(W)
FDS2670
August 2001
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
2
mounted on a 1in
pad of 2 oz copper
b) 105°/W when
mounted on a 0.04
in2 pad of 2 oz
copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. ISD ≤ 3A, di/dt ≤ 100A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
FDS2670 Rev C1(W)
FDS2670
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
