FDS2572
150V, 0.047 Ohms, 4.9A, N-Channel UltraFET® Trench MOSFET
General Description
Features
®
UltraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for Rds(on), low ESR, low total and Miller gate
charge, these devices are ideal for high frequency DC to
DC converters.
• RDS(ON) = 0.040Ω (Typ.), VGS = 10V
Applications
•
•
•
•
• Qg(TOT) = 29nC (Typ.), VGS = 10V
• Low QRR Body Diode
• Maximized efficiency at high frequencies
• UIS Rated
DC/DC converters
Telecom and Data-Com Distributed Power Architectures
48-volt I/P Half-Bridge/Full-Bridge
24-volt Forward and Push-Pull topologies
D
D
D
D
DD
D
D
Pin 1 SO-8
G
S G
S
S
S S
S
4
6
SO-8
5
3
7
2
8
1
MOSFET Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDSS
Ratings
150
Units
V
Gate to Source Voltage
±20
V
Continuous (TC = 25oC, VGS = 10V, RθJA = 50 oC/W)
4.9
A
Continuous (TC = 100oC, VGS = 10V, RθJA = 50 oC/W)
VGS
Drain to Source Voltage
Parameter
3.1
A
Drain Current
ID
Pulsed
Figure 4
PD
TJ, TSTG
Operating and Storage Temperature
A
2.5
20
Power dissipation
Derate above 25oC
W
mW/oC
o
-55 to 150
C
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
(NOTE1)
25
o
RθJA
Thermal Resistance Junction to Case at 10 seconds
(NOTE2)
50
oC/W
RθJA
Thermal Resistance Junction to Case at steady state
(NOTE2)
85
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDS2572
©2001 Fairchild Semiconductor Corporation
Device
FDS2572
Reel Size
330mm
Tape Width
12mm
Quantity
2500units
FDS2572 Rev. C, July 2013
FDS2572
July 2013
FDS2572
Typical Characteristic
POWER DISSIPATION MULTIPLIER
1.2
6
1.0
ID, DRAIN CURRENT (A)
VGS = 10V
0.8
0.6
0.4
0.2
4
2
0
0
0
25
50
75
100
125
150
25
50
TA , AMBIENT TEMPERATURE (oC)
75
100
125
150
TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continous Drain Current vs
Case Temperature
2
THERMAL IMPEDANCE
ZθJA, NORMALIZED
1
0.1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
0.001
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
600
TC = 25oC
IDM , PEAK CURRENT (A)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
VGS = 10V
I = I25
150 - TC
125
10
1
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2001 Fairchild Semiconductor Corporation
FDS2572 Rev. C, July 2013
