BZT03C...
Silicon Z–Diodes and Transient Voltage Suppressors
Features
D Glass passivated junction
D Hermetically sealed package
D Clamping time in picoseconds
Applications
Medium power voltage regulators and medium power
transient suppression circuits
94 9539
Absolute Maximum Ratings
Tj = 25_C
Parameter
Power dissipation
Power dissipation
Repetitive peak reverse power
dissipation
Non repetitive peak surge power
dissipation
Junction temperature
Storage temperature range
Test Conditions
l=10mm,
TL=25°C
Tamb=25°C
Type
Symbol
PV
Unit
W
PV
PZRM
1.3
10
W
W
PZSM
600
W
Tj
Tstg
tp=100ms,
Tj=25°C
Value
3.25
175
–65...+175
°C
°C
Symbol
RthJA
RthJA
Value
46
100
Unit
K/W
K/W
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Junction ambient
Test Conditions
l=10mm, TL=constant
on PC board with spacing 25mm
Characteristics
Tj = 25_C
Parameter
Forward voltage
Test Conditions
IF=0.5A
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
Type
Symbol
VF
Min
Typ
Max
1.2
Unit
V
1 (6)