MCC
TM
Micro Commercial Components
2SC4081
2SC4081-A
2SC4081-B
2SC4081-C
omponents
20736 Marilla Street Chatsworth
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$
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Features
NPN Silicon
Epitaxial Transistors
Low Cob . Cob=2.0pF(Typ.)
Complementary to 2SC1576A
Case Material: Molded Plastic.
Classification Rating 94V-0
UL Flammability
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
50
60
7
150
200
150
-55 to +150
Unit
V
V
V
mA
mW
SOT-323
A
D
C
B
C
E
B
Electrical Characteristics @ 25
Symbol
F
Unless Otherwise Specified
Parameter
Min
Typ
Max
E
Units
OFF CHARACTERISTICS
ICBO
Collector Cutoff Current
(VCB=-60Vdc)
Emitter Cutoff Current
(VEB=-6.0Vdc)
IEBO
---
---
100
nAdc
---
---
100
H
G
nAdc
K
DIMENSIONS
ON CHARACTERISTICS
BVCBO
Collector-base breakdown voltage
(IC=-50µAdc )
60
---
---
Vdc
BVCEO
Collector-emitter
voltage (IC=-1µAdc)
50
---
---
Vdc
BVEBO
Emitter-base breakdown voltage
(IE=-50µAdc)
6
---
---
Vdc
120
---
560
---
0.4
INCHES
MIN
MAX
.071
.087
.045
.053
.079
.087
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.012
.016
Vdc
breakdown
hFE
DC Current Gain
(IC=-1mAdc, VCE=-6.0Vdc)
VCE(sat)
Collector Saturation Voltage*
(IC=-50mAdc, IB=-5.0mAdc)
---
Cob
Output Capacitance
(VCB=-12.0Vdc, IE=0, f=1.0MHz)
---
2.0
3.5
pF
fT
Gain Bandwidth product
(VCE=-12Vdc, IE=2mAdc,f=30MHz)
---
180
---
DIM
A
B
C
D
E
F
G
H
J
K
MHz
---
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.00
2.20
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.30
.40
NOTE
Suggested Solder
Pad Layout
0.70
hFE CLASSIFICATION
Rank
Marking
hFE
J
0.90
1.90
0.65
A
BQ
120~270
B
BR
180~390
C
BS
270~560
0.65
www.mccsemi.com
Revision: 3
1 of 4
2007/03/01
