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SB1045CT

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仕様・特性

SB1020CT~SB1060CT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 60 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. 0.419(10.66) 0.387(9.85) Flame Retardant Epoxy Molding Compound. 0.139(3.55) MIN. 0.196(5.00) 0.163(4.16) 0.054(1.39) 0.045(1.15) • Exceeds environmental standards of MIL-S-19500/228 0.624(15.87) 0.548(13.93) • Low power loss, high efficiency. • Low forward voltage, high current capability • High surge capacity. • For use in low voltage,high frequency inverters free wheeling , and polarlity protection applications. 0.177(4.5) MAX. 0.058(1.47) 0.042(1.07) 0.038(0.96) 0.019(0.50) MECHANCAL DATA • Case: TO-220AB Molded plastic • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 0.100(2.54) 0.115(2.92) 0.080(2.03) 0.50(12.7)MIN. • In compliance with EU RoHS 2002/95/EC directives 0.025(0.65)MAX. 0.100(2.54) • Polarity: As marked. • Standard packaging: Any • Weight: 0.0655 ounces, 1.859 grams. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% PA RA ME TE R S YM B OL S B 1 0 2 0 C T S B 1 0 3 0 C T S B 1 0 4 0 C T S B 1 0 4 5 C T S B 1 0 5 0 C T S B 1 0 6 0 C T UNITS Ma xi m um R e c ur re nt P e a k R e ve r s e Vo lta g e V RRM 20 30 40 45 50 60 V Ma xi m um R MS Vo lta g e V RM S 14 21 28 3 1 .5 35 42 V Ma xi m um D C B lo c k i ng Vo lta g e V DC 20 30 40 45 50 60 V Ma xi m um A ve r a g e F o rwa r d C urre nt .3 7 5 " (9 .5 m m) le a d le ng th a t T C = 7 5 O C I F ( AV ) 10 A P e a k F o r wa rd S ur g e C ur re nt : 8 .3 ms s i ng le ha lf s i ne - wa ve s up e r i mp o s e d o n ra te d lo a d ( J E D E C me tho d ) IF S M 150 A Ma xi m um F o r wa rd Vo lta g e a t 5 A p e r le g VF Ma xi m um D C Re ve r s e C urr e nt a t Ra te d D C B lo c k i ng Vo lta g e TA = 2 5 OC TA = 1 0 0 OC Typ i c a l The rm a l R e s i s ta nce Op e r a ti ng J unc ti o n a nd S to ra g e Te m p e ra tur e Ra ng e 0 .5 5 0 .7 5 IR 0 .2 50 R J C 3 .0 T J ,T S TG - 5 0 to + 1 2 5 V mA O C / W O C NOTE: Both Bonding and Chip structure are available. September 2,2010-REV.04 PAGE . 1

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