This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2S728
Silicon epitaxial planar type
Unit: mm
For switching
0.60+0.05
–0.03
0.12+0.05
–0.02
0.80+0.05
–0.03
0.01±0.01
5˚
(0.60)
(0.80)
1.20+0.05
–0.03
(0.60)
0.80±0.05
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• High-density mounting is possible
• Low forward voltage VF and good wave detection efficiency η
• Small temperature coefficient of forward characteristic
• Small reverse current IR
1.60±0.05
1
■ Features
2
0.30±0.05
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–0.05
5˚
Symbol
Rating
Maximum peak reverse voltage
VRM
Peak forward current
IFM
Unit
30
VR
V
Junction temperature
Storage temperature
Tstg
°C
−55 to +125
Tj
mA
125
IF
V
mA
30
Forward current
30
150
(0.15)
Parameter
Reverse voltage
0.01±0.01
■ Absolute Maximum Ratings Ta = 25°C
°C
1 : Anode
2 : Cathode
EIAJ : SC-79
SSMini2-F1 Package
Marking Symbol: B
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Forward voltage
VF1
Min
Typ
Max
Unit
IF = 1 mA
0.4
V
IF = 30 mA
1.0
ue
VF2
Conditions
VR = 30 V
Ct
VR = 1 V, f = 1 MHz
1.5
pF
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1.0
ns
VIN = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
IR
Terminal capacitance
Reverse recovery time
*
ce
/D
isc
on
tin
Reverse current
trr
η
en
an
Detection efficiency
300
nA
Ma
int
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4. *: trr measurement circuit
Input Pulse
Bias Application Unit (N-50BU)
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: April 2004
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
SKH00024BED
Output Pulse
t
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
1