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MA2S11100L

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仕様・特性

This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA2S728 Silicon epitaxial planar type Unit: mm For switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 0.01±0.01 5˚ (0.60) (0.80) 1.20+0.05 –0.03 (0.60) 0.80±0.05 M Di ain sc te on na tin nc ue e/ d • High-density mounting is possible • Low forward voltage VF and good wave detection efficiency η • Small temperature coefficient of forward characteristic • Small reverse current IR 1.60±0.05 1 ■ Features 2 0.30±0.05 d pla inc Pl ea ne lud se pla m d m es vis ne ain ain foll htt it d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at ion / . 0+0 –0.05 5˚ Symbol Rating Maximum peak reverse voltage VRM Peak forward current IFM Unit 30 VR V Junction temperature Storage temperature Tstg °C −55 to +125 Tj mA 125 IF V mA 30 Forward current 30 150 (0.15) Parameter Reverse voltage 0.01±0.01 ■ Absolute Maximum Ratings Ta = 25°C °C 1 : Anode 2 : Cathode EIAJ : SC-79 SSMini2-F1 Package Marking Symbol: B ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Forward voltage VF1 Min Typ Max Unit IF = 1 mA 0.4 V IF = 30 mA 1.0 ue VF2 Conditions VR = 30 V Ct VR = 1 V, f = 1 MHz 1.5 pF IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1.0 ns VIN = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % IR Terminal capacitance Reverse recovery time * ce /D isc on tin Reverse current trr η en an Detection efficiency 300 nA Ma int Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 2 GHz. 4. *: trr measurement circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: April 2004 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ω SKH00024BED Output Pulse t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω 1

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