〈SMALL-SIGNAL TRANSISTOR〉
ISA1993AS1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(FRAME TYPE)
DESCRIPTION
OUTLINE DRAWING
Unit：ｍｍ
ISA1993AS1 is mini package resin sealed
4.0
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
3.0
.
FEATURE
1.0
14.0
1.0
0.1
0.45
● Small collector to emitter saturation voltage.
VCE(sat)=max-0.3V（@Ic=-100mA、IB=-10mA）
1.27 1.27
●Excellent linearity of DC forward gain.
2.5
0.4
●Super mini package for easy mounting
①
②
③
APPLICATION
small type machine low frequency voltage Amplify application.
JEITA：
JEDEC：
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE
MAXIMUM RATINGS（Ta=25℃）
.
Symbol
Parameter
Ratings
Unit
VCBO
Collector to Base voltage
-50
VCEO
Collector to Emitter voltage
-50
V
VEBO
Emitter to Base voltage
-6
MARKING
V
V
I
Collector current
-200
mA
Pc
Collector dissipation
450
mW
Tj
Junction temperature
＋150
℃
Tstg
Storage temperature
-55∼＋150
A93
□□F
℃
O
hFE アイテム
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
C to E break down voltage
V(BR)CEO
ICBO
V
CB
Emitter cut off current
IEBO
V
EB
DC forward current gain
hFE
V
CE
DC forward current gain
hFE
V
CE
Gain bandwidth product
VCE(sat)
Min
Typ
Max
-50
IC= -100μA , RBE= ∞
Collector cut off current
C to E Saturation Vlotage
Limits
Test conditions
-
-
Unit
V
= -50V , I E= 0mA
-
-
-0.1
μA
= -6V , I C= 0mA
-
-
-0.1
μA
= -6V , IC= -1mA
150
-
500
-
= -6V , IC= -0.1mA
50
-
-
-
-
-
-0.3
V
I C= -100mA , I B= -10mA
fT
V
CE
Collector output capacitance
Cob
V
= -6V , I E= 10mA
CB= -6V , I E= 0mA,f=1MHz
NoiseFigure
NF
V
CE
-
-
MHz
4.0
-
pF
-
= -6V , I E= 0.3mA,f=100Hz,RG=10kΩ
200
-
-
20
dB
※） It shows hFE classification in below table.
Item
E
F
hFE item
150∼300
250∼500
ISAHAYA ELECTRONICS CORPORATION
