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T03A-6P
AP60T03AS/P Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS ▼ Low Gate Charge ▼ Fast Switching 30V RDS(ON) D 12mΩ ID G 45A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. TO-263(S) The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60T03AP) are available for low-profile applications. TO-220(P) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ± 20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 45 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 32 A 120 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 44 W Linear Derating Factor 0.352 W/℃ TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Value Unit Rthj-c Thermal Resistance Junction-case Max. 3.4 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data and specifications subject to change without notice 200909032
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