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部品型式

1R5BZ41

製品説明
仕様・特性

1R5BZ41,1R5GZ41 TOSHIBA Rectifier Silicon Diffused Type 1R5BZ41,1R5GZ41 General Purpose Rectifier Applications Unit: mm • Average Forward Current: IF (AV) = 1.5 A (Ta = 35°C) • Repetitive Peak Reverse Voltage: VRRM = 100 V, 400 V • Peak One Cycle Surge Forward Current (non repetitive): IFSM = 150 A Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol 1R5BZ41 Repetitive peak reverse voltage Rating 100 VRRM 1R5GZ41 Average forward current (Ta = 35°C) Peak one cycle surge forward current (non repetitive) Junction temperature V 400 IF (AV) IFSM Unit 1.5 A 150 (50 Hz) A 165 (60 Hz) Tj °C Tstg Storage temperature range −40 to 150 −40 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 3-4B1A reliability significantly even if the operating conditions (i.e. Weight: 0.47 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Peak forward voltage VFM IFM = 0.5 A ― ― 0.95 V Repetitive peak reverse current IRRM VRRM = Rated ― ― 10 μA DC ― ― 90 °C /W Thermal resistance (junction to ambient) Rth (j-a) Marking Abbreviation Code 1R 5G 1R5BZ41 1R5G Lot No. Part No. 1R5B Part No. (or abbreviation code) 1R5GZ41 A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2011-01-05

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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