SSM6L13TU
TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type
SSM6L13TU
Power Management Switch Applications
High-Speed Switching Applications
Unit
VDS
Drain-source voltage
Rating
20
V
V
VGSS
±12
DC
ID
0.8
Pulse
IDP
1.6
Gate-source voltage
Drain current
4
A
1.Source1
2.Gate1
UF6 3.Drain2
Q2 Absolute Maximum Ratings (Ta = 25 °C)
Characteristic
5
+0.06
0.16-0.05
Symbol
2
0.7±0.05
Characteristic
6
3
Q1 Absolute Maximum Ratings (Ta = 25 °C)
1
+0.1
0.3-0.05
1.7±0.1
RDS(ON) = 235 mΩ (max) (@VGS = 1.8 V)
RDS(ON) = 178 mΩ (max) (@VGS = 2.5 V)
RDS(ON) = 460 mΩ (max) (@VGS = −1.8 V)
RDS(ON) = 306 mΩ (max) (@VGS = −2.5 V)
0.65 0.65
: Pch
2.1±0.1
1.3±0.1
1.8-V drive
N–ch , P–ch 2–in–1
Low ON–resistance: Nch
2.0±0.1
•
•
•
•
•
•
Unit: mm
Symbol
Rating
Unit
Drain-source voltage
VDS
−20
V
Gate-source voltage
VGSS
±8
V
DC
ID
−0.8
Pulse
IDP
−1.6
4.Source2
5.Gate2
6.Drain1
Drain current
A
JEDEC
―
JEITA
―
TOSHIBA
2-2T1B
Weight: 7 mg (typ.)
Absolute Maximum Ratings (Q1 , Q2 Common)
(Ta = 25 °C)
Characteristic
Power dissipation
Symbol
Rating
Unit
PD (Note 1)
500
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (total dissipation)
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
Marking
6
Equivalent Circuit (top view)
5
4
6
2
4
Q1
KV
1
5
Q2
3
1
2
1
3
2010-07-10