2SB1020A
TOSHIBA Transistor
Silicon PNP Triple Diffused Type (Darlington Power)
2SB1020A
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
•
High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A)
•
Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)
•
Unit: mm
Complementary to 2SD1415A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−100
V
Collector-emitter voltage
VCEO
−100
V
Emitter-base voltage
VEBO
−5
V
DC
IC
−7
Pulse
ICP
−10
IB
−0.7
Collector current
Base current
Ta = 25°C
Collector power
dissipation
Tc = 25°C
Junction temperature
PC
2.0
30
A
A
W
Tj
°C
Tstg
Storage temperature range
150
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 5 kΩ
≈ 150 Ω
Emitter
1
2006-11-21