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部品型式

CMH08ATE12L,Q,M

製品説明
仕様・特性

CMH08A TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type CMH08A Switching Mode Power Supply Applications Unit: mm • Repetitive peak reverse voltage: VRRM = 400 V • • • • Average forward current: IF (AV) = 2.0 A Low forward voltage: VFM=1.8 V(Max.) Very Fast Reverse-Recovery Time: trr =35ns(Max.) Suitable for compact assembly due to small surface-mount package “M−FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Repetitive peak reverse voltage IF (AV) Peak one cycle surge forward current (non-repetitive) V 2.0 (Note 1) A IFSM 20 (50 Hz) A Tj −40~150 °C Tstg −40~150 °C Junction temperature Storage temperature range Unit 400 VRRM Average forward current Rating Note 1: Tℓ=99°C Device mounted on a seramic board board size: 50 mm × 50 mm soldering land: 2 mm ×2 mm board thickness:0.64t JEDEC ― JEITA ― Note 2: Using continuously under heavy loads (e.g. the application of TOSHIBA 3-4E1A high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.023 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max ⎯ VFM (1) Peak repetitive reverse current ⎯ 0.88 VFM (2) IFM = 1.0 A (pulse test) ⎯ 1.3 ⎯ VFM (3) Peak forward voltage IFM = 0.1 A (pulse test) IFM = 2.0 A (pulse test) ⎯ 1.6 1.8 IRRM Reverse recovery time trr Forward recovery time tfr VRRM = 400 V (pulse test) ⎯ ⎯ 10 μA ⎯ ⎯ 35 ns ns Thermal resistance (junction to lead) IF = 1.0 A ⎯ ⎯ 100 ⎯ ⎯ 60 Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) (soldering land: 6 mm × 6 mm) (board thickness: 1.6 t) ⎯ ⎯ 135 Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) (soldering land: 2.1 mm × 1.4 mm) (board thickness: 1.6 t) Rth (j-a) V IF = 1 A, di/dt = −30 A/μs Device mounted on a ceramic board (board size: 50 mm × 50 mm) (soldering land: 2 mm × 2 mm) (board thickness: 0.64 t) Thermal resistance (junction to ambient) Unit ⎯ ⎯ 210 ⎯ ⎯ 16 ⎯ Rth (j-ℓ) °C/W °C/W Start of commercial production 1 2002-12 2013-11-01

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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