製品説明 仕様・特性: CMZ12 to CMZ51 TOSHIBA Zener Diode Silicon Diffused Type CMZ12 to CMZ51 ○ Surge absorber Unit: mm • Average power dissipation :P=2W • Zener voltage : VZ = 12 to 51 V • Suitable for compact assembly due to small surface mount package “M−FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Power dissipation P 2 (Note 1) W Junction temperature Tj −40 to 150 °C Tstg −40 to 150 °C Storage temperature range 1. 2. Anode Cathode JEDEC JEITA Note 1: Ta = 30°C Device mounted on a ceramic board Board size : 50 mm × 50 mm Land Pattern size : 2 mm × 2 mm Board thickness : 0.64 mm ― ― TOSHIBA 3-4E1S Weight: 0.023 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Land Pattern Dimensions (for reference only) 2.1 Unit: mm 1.4 3.0 1.4 Start of commercial production 2002-10 1 2015-05-15

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