PD - 9.529B
IRCZ44
HEXFET® Power MOSFET
l
l
l
l
l
l
Dynamic dv/dt Rating
Current Sense
175°C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
VDSS = 60V
RDS(on) = 0.028Ω
ID = 50*A
Description
Third Generation HEXFETs from International Rectifier provide the designer with
the best combination of fast switching, ruggedized device, low on-resistance and
cost-effectiveness.
The HEXSense device provides an accurate fraction of the drain current through
the additional two leads to be used for control or protection of the device. These
devices exhibit similar electrical and thermal characteristics as their IRF-series
equivalent part numbers. The provision of a kelvin source connection effectively
eliminates problems of common source inductance when the HEXSence is
used as a fast, high-current switch in non current-sensing applications.
TO-220 HexSense
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
50*
37
210
150
1.0
±20
30
4.5
-55 to + 175
Units
A
W
W/°C
V
mJ
V/ns
°C
300 (1.6mm from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
—
Document Number: 90042
Min.
Typ.
Max.
Units
—
—
—
—
0.50
—
1.0
—
62
°C/W
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