FDB3682 / FDP3682
N-Channel PowerTrench® MOSFET
100 V, 32 A, 36 mΩ
Features
Applications
• RDS(on) = 32 mΩ ( Typ.) @ VGS = 10 V, ID = 32 A
• Consumer Appliances
• QG(tot) = 18.5 nC( Typ.) @ V GS = 10 V
• Synchronous Rectification
• Low Miller Charge
• Battery Protection Circuit
• Low Qrr Body Diode
• Motor drives and Uninterruptible Power Supplies
• UIS Capability (Single Pulse and Repetitive Pulse)
• Micro Solar Inverter
Formerly developmental type 82755
D
D
G
G
S
G
D
S
D2-PAK
(TO-263)
S
TO-220
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
FDB3682 / FDP3682
100
Unit
V
VGS
Gate to Source Voltage
±20
V
Continuous (TC = 25oC, VGS = 10V)
32
A
Continuous (TC = 100oC, VGS = 10V)
23
A
6
A
Drain Current
ID
Continuous (Tamb = 25oC, VGS = 10V, R θJA = 43oC/W)
Pulsed
E AS
PD
TJ, TSTG
Figure 4
Power dissipation
A
55
Single Pulse Avalanche Energy (Note 1)
mJ
95
W/oC
-55 to 175
Operating and Storage Temperature
W
0.63
Derate above 25oC
oC
Thermal Characteristics
o
RθJC
Thermal Resistance Junction to Case TO-220, TO-263, Max.
RθJA
Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2), Max.
62
oC/W
RθJA
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area,
Max.
43
o
©2002 Fairchild Semiconductor Corporation
FDB3682 / FDP3682 Rev. C1
1
1.58
C/W
C/W
www.fairchildsemi.com
FDB3682 / FDP3682 N-Channel PowerTrench ® MOSFET
March 2013
30
ID, DRAIN CURRENT (A)
35
1.0
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
VGS = 10V
25
20
15
10
0.2
5
0
0
25
50
75
100
150
125
0
175
25
50
75
TC , CASE TEMPERATURE (oC)
100
125
150
175
TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x R θJC + TC
SINGLE PULSE
0.01
10 -5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
400
TC = 25oC
IDM, PEAK CURRENT (A)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I25
VGS = 10V
150
100
30
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
FDB3682 / FDP3682 Rev. C1
3
www.fairchildsemi.com
FDB3682 / FDP3682 N-Channel PowerTrench ® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
