FDC6401N
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
Features
This Dual N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 3.0 A, 20 V.
• Low gate charge (3.3 nC)
Applications
• High performance trench technology for extremely
RDS(ON) = 70 mΩ @ VGS = 4.5 V
RDS(ON) = 95 mΩ @ VGS = 2.5 V
low RDS(ON)
• DC/DC converter
• High power and current handling capability
• Battery Protection
• Power Management
D2
S1
4
SuperSOT
-6
S2
1
G1
Absolute Maximum Ratings
Symbol
2
6
G2
TM
3
5
D1
o
TA=25 C unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
(Note 1a)
3.0
A
PD
Power Dissipation for Single Operation
(Note 1a)
0.96
– Continuous
– Pulsed
12
(Note 1b)
TJ, TSTG
0.9
(Note 1c)
W
0.7
–55 to +150
°C
(Note 1a)
130
°C/W
(Note 1)
60
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.401
FDC6401N
7’’
8mm
3000 units
©2001 Fairchild Semiconductor Corporation
FDC6401N Rev C (W)
FDC6401N
October 2001
FDC6401N
Typical Characteristics
2
12
3.0V
2.5V
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 4.5V
10
3.5V
8
2.0V
6
4
2
0
0
1
2
VGS = 2.0V
1.8
1.6
1.4
2.5V
1.2
3.0V
4.5V
0.8
3
0
2
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
8
10
12
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.22
ID = 3.0A
VGS = 4.5V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6
ID, DIRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
0.6
ID = 1.5A
0.18
0.14
o
TA = 125 C
0.1
0.06
o
TA = 25 C
0.02
-50
-25
0
25
50
75
100
125
150
1
2
o
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
100
TA = -55oC
o
25 C
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
3.5V
1
8
125oC
6
4
2
0
VGS = 0V
10
TA = 125oC
1
o
25 C
0.1
-55oC
0.01
0.001
0.0001
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC6401N Rev C (W)
