N-Channel PowerTrench® MOSFET
150V, 21A, 66mΩ
Features
Applications
• r DS(ON) = 58mΩ (Typ.), VGS = 10V, ID = 7A
• DC/DC converters and Off-Line UPS
• Qg(tot) = 19nC (Typ.), VGS = 10V
• Distributed Power Architectures and VRMs
• Low Miller Charge
• Primary Switch for 24V and 48V Systems
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• High Voltage Synchronous Rectifier
Formerly developmental type 82855
DRAIN
(FLANGE)
D
GATE
G
SOURCE
TO-252AA
S
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
Ratings
150
Units
V
VGS
Gate to Source Voltage
±20
V
Continuous (TC = 25 oC, VGS = 10V)
21
A
Continuous (TC = 100 oC, VGS = 10V)
15
Drain Current
ID
Continuous (Tamb = 25oC, VGS = 10V, R θJA = 52oC/W)
Pulsed
E AS
PD
TJ, TSTG
3.7
A
Figure 4
Power dissipation
A
59
Single Pulse Avalanche Energy (Note 1)
mJ
95
W/oC
-55 to 175
Operating and Storage Temperature
W
0.63
Derate above 25oC
oC
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case TO-252
1.58
o
C/W
RθJA
Thermal Resistance Junction to Ambient TO-252
100
o
C/W
52
o
C/W
RθJA
2
Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
©2010 Fairchild Semiconductor Corporation
FDD2582 Rev.B1
1
www.fairchildsemi.com
FDD2582
December 2010
FDD2582
FDD2582
Typical Characteristics TC = 25°C unless otherwise noted
1.2
25
VGS = 10V
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
20
15
10
5
0.2
0
0
25
50
75
100
150
125
0
175
25
50
75
TC , CASE TEMPERATURE (oC)
100
125
150
175
TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x R θJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
300
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
IDM, PEAK CURRENT (A)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
175 - TC
I = I25
100
150
VGS = 10V
20
10 -5
10-4
10-3
10-2
10-1
100
101
t , PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2010 Fairchild Semiconductor Corporation
FDD2582 Rev.B1
3
www.fairchildsemi.com
