FDD3706/FDU3706
20V N-Channel PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
• 50 A, 20 V
• Low gate charge (16 nC)
Applications
• Fast Switching
• DC/DC converter
• High performance trench technology for extremely
RDS(ON) = 9 mΩ @ VGS = 10 V
RDS(ON) = 11 mΩ @ VGS = 4.5 V
RDS(ON) = 16 mΩ @ VGS = 2.5 V
• Motor Drives
low RDS(ON)
D
G
D-PAK
TO-252
(TO-252)
I-PAK
(TO-251AA)
G D S
Absolute Maximum Ratings
Symbol
G
S
o
TA=25 C unless otherwise noted
Parameter
Ratings
Units
20
V
± 12
V
50
A
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
14.7
Pulsed
(Note 1a)
60
(Note 3)
44
@TA=25°C
(Note 1a)
3.8
@TA=25°C
(Note 1b)
PD
Power Dissipation
TJ, TSTG
@TC=25°C
W
1.6
Operating and Storage Junction Temperature Range
°C
-55 to +175
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
3.4
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
45
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
FDD3706
FDD3706
FDU3706
FDU3706
©2002 Fairchild Semiconductor Corp.
Reel Size
Tape width
Quantity
D-PAK (TO-252)
13’’
12mm
2500 units
I-PAK (TO-251)
Tube
N/A
75
FDD3706/FDU3706 Rev C (W)
FDD3706/FDU3706
April 2002
FDD3706/FDU3706
Typical Characteristics
100
1.8
3.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS=4.5V
3.5V
80
2.5V
60
40
2.0V
20
1.6
VGS = 2.5V
1.4
3.0V
1.2
3.5V
0
1
2
3
4
0
5
20
40
60
80
100
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
1.6
0.03
ID = 14.7A
VGS = 4.5V
RDS(ON), ON-RESISTANCE (OHM)
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
0.8
0
1.4
1.2
1
0.8
0.6
I D = 7.4A
0.025
0.02
TA = 125 oC
0.015
TA = 25oC
0.01
0.005
-50
-25
0
25
50
75
100
125
150
175
1
2
o
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
TJ , JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
withTemperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
100
60
TA =-55o C
VGS = 0V
25oC
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
50
I D, DRAIN CURRENT (A)
4.0V
1
125oC
40
30
20
10
10
TA = 125o C
1
o
25 C
0.1
o
-55 C
0.01
0.001
0.0001
0
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
3
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD3706/FDU3706 Rev C (W)
