FDD5690
60V N-Channel PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
Low gate charge (23nC typical).
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V
RDS(ON) = 0.032 Ω @ VGS = 6 V.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
D
D
G
G
S
TO-252
Absolute Maximum Ratings
Symbol
S
o
T C =25 C unless otherwise noted
Parameter
Ratings
Units
V DSS
Drain-Source Voltage
60
V
V GSS
Gate-Source Voltage
V
ID
Maximum Drain Current
(Note 1)
±20
30
(Note 1a)
9
Maximum Drain Current
-Continuous
-Pulsed
100
Maximum Power Dissipation @ T C = 25 o C
PD
(Note 1)
50
T A = 25 o C
(Note 1a)
3.2
T A = 25 o C
T J, T stg
A
(Note 1b)
Operating and Storage Junction Temperature Range
W
1.3
-55 to +150
°C
Thermal Characteristics
R θJC
Thermal Resistance, Junction-to- Case
(Note 1)
2.5
°C/W
R θJA
Thermal Resistance, Junction-to- Ambient
(Note 1a)
40
°C/W
(Note 1b)
96
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD5690
FDD5690
13’’
16mm
2500
2002 Fairchild Semiconductor Corporation
FDD5690, Rev. C
FDD5690
December 2002
FDD5690
Typical Characteristics
2
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN-SOURCE CURRENT (A)
60
VGS = 10V
6.0V
50
5.0V
40
30
4.5V
20
4.0V
10
0
1.8
1.6
VGS = 4.5V
1.4
5.0V
1.2
1
0.8
0
1
2
3
4
5
0
10
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
40
50
60
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.08
2
ID = 15A
ID = 9A
VGS = 10V
1.8
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
ID, DRAIN CURRENT (A)
1.6
1.4
1.2
1
0.8
0.6
0.4
0.06
o
TA = 125 C
0.04
o
0.02
TA = 25 C
0
-50
-25
0
25
50
75
100
125
150
3
4
5
o
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
60
100
o
VDS = 5V
VGS = 0V
TA = -55 C
o
25 C
50
10
o
o
125 C
TA = 125 C
40
1
30
0.1
20
0.01
10
0.001
o
25 C
o
-55 C
0.0001
0
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDD5690, Rev. C
