October 2003
FDFS6N303
N-Channel MOSFET with Schottky Diode
General Description
Features
The FDFS6N303 incorporates a high cell density MOSFET
and low forward drop (0.35V) Schottky diode into a single
surface mount power package. The MOSFET and Schottky
diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility and
ease of use. This product is particularly suited for switching applications such as DC/DC buck, boost, synchronous,
and non-synchronous converters where the MOSFET is driven
as low as 4.5V and fast switching, high efficiency and
small PCB footprint
is desirable.
6 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V.
R
DS(ON) = 0.055 Ω @ VGS = 4.5 V.
VF < 0.28 V @ 0.1 A
VF < 0.42 V @ 3 A
VF < 0.50 V @ 6 A.
Schottky and MOSFET incorporated into single power
surface mount SO-8 package.
General purpose pinout for design flexibility.
Ideal for DC/DC converter applications.
SuperSOTTM-6
SOT-23
D
C
C
SuperSOTTM-8
D
SO-8
SOIC-16
SOT-223
A
8
C
A
2
7
C
S
3
6
D
G
FS
FD 303
6N
1
4
5
D
G
SO-8
pin 1
A
A
MOSFET Maximum Ratings
Symbol
S
TA = 25oC unless otherwise noted
Parameter
FDFS6N303
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current - Continuous
6
A
(Note 1a)
- Pulsed
PD
30
Power Dissipation for Dual Operation
2
Power Dissipation for Single Operation
(Note 1a)
(Note 1c)
TJ,TSTG
Operating and Storage Temperature Range
Schottky Diode Maximum Ratings
VRRM
Average Forward Current
© 2003 Fairchild Semiconductor Corporation
0.9
-55 to 150
°C
30
V
2
A
TA = 25oC unless otherwise noted
Repetitive Peak Reverse Voltage
IO
W
1.6
(Note 1a)
FDFS6N303 Rev. D3
Typical Electrical Characteristics
VGS= 10V
3
6.0V
20
R DS(ON) , NORMALIZED
5.0V
25
4.5V
15
4.0V
10
3.5V
5
DRAIN-SOURCE ON-RESISTANCE
ID , DRAIN-SOURCE CURRENT (A)
30
2.5
VGS = 4.0V
2
4.5V
5.0V
1.5
6.0V
7.0V
10V
1
3.0V
0.5
0
0
1
2
3
4
0
5
10
R DS(ON) , ON-RESISTANCE (OHM)
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.2
1
0.8
0.075
0
25
50
75
100
125
150
TA = 125°C
0.05
0.025
0
-25
25°C
2
4
I S , REVERSE DRAIN CURRENT (A)
I D , DRAIN CURRENT (A)
TA = -55°C
25°C
25
125°C
20
15
10
5
2
3
4
5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
10
7
VGS = 0V
10
1
TA = 125°C
25°C
0.1
-55°C
0.01
0.001
0.0001
1
8
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
VDS = 5V
6
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
0
30
I D = 3A
TJ , JUNCTION TEMPERATURE (°C)
30
25
0.1
ID = 6A
VGS = 10V
1.4
0.6
-50
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
1.6
15
I D , DRAIN CURRENT (A)
V DS , DRAIN-SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDFS6N303 Rev. D3