FDG326P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
• –1.5 A, –20 V.
Applications
• Low gate charge
• Battery management
• High performance trench technology for extremely
low RDS(ON)
• Load switch
RDS(ON) = 140 mΩ @ VGS = –4.5 V
RDS(ON) = 180 mΩ @ VGS = –2.5 V
RDS(ON) = 250 mΩ @ VGS = –1.8 V
• Compact industry standard SC70-6 surface mount
package
1
6
2
5
3
4
SC70-6
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
–20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
–1.5
A
– Continuous
(Note 1a)
– Pulsed
PD
–6
Power Dissipation for Single Operation
0.75
(Note 1b)
TJ, TSTG
(Note 1a)
0.48
Operating and Storage Junction Temperature Range
W
-55 to +150
°C
260
°C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
RθJA
Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.26
FDG326P
7’’
8mm
3000 units
2001 Fairchild Semiconductor Corporation
FDG326P Rev D(W)
FDG326P
January 2001
FDG326P
Typical Characteristics
2.5
VGS = -4.5V
-3.0V
-2.5V
5
-ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6
4
-2.0V
3
-1.8V
2
1
-1.5V
2.25
VGS = -1.8V
2
-2.0V
1.75
1.5
-2.5V
1.25
-3.0V
-4.5V
1
0.75
0
0
0.5
1
1.5
2
0
2.5
1
2
Figure 1. On-Region Characteristics.
4
5
6
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.35
1.4
ID = -1.5A
VGS = -4.5V
1.3
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
ID = -0.8 A
0.3
0.25
0.2
TA = 125oC
TA = 25oC
0.15
0.1
0.05
150
1
2
3
4
5
o
TJ, JUNCTION TEMPERATURE ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
TA = -55oC
VDS = -5V
o
25 C
5
-ID, DRAIN CURRENT (A)
-IS, REVERSE DRAIN CURRENT (A)
6
125oC
4
3
2
1
VGS = 0V
1
TA = 125oC
25oC
-55oC
0.1
0.01
0.001
0
0.5
1
1.5
2
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG326P Rev D(W)
