FDP047AN08A0 / FDH047AN08A0
N-Channel PowerTrench® MOSFET
75 V, 80 A, 4.7 mΩ
Features
Applications
• R DS(ON) = 4.0 m Ω (Typ.), VGS = 10 V, ID = 80 A
• Synchronous Rectification for ATX / Server / Telecom PSU
• Qg(tot) = 92 nC (Typ.), VGS = 10V
• Battery Protection Circuit
• Low Miller Charge
• Motor Drives and Uninterruptible Power Supplies
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82684
D
GD
S
TO-220
G
G
D
TO-247
S
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
FDP047AN08A0
FDH047AN08A0
Parameter
Drain to Source Voltage
75
V
Gate to Source Voltage
±20
V
80
A
15
A
Drain Current
Continuous (TC < 144oC, VGS = 10V)
Continuous (TC = 25oC, VGS = 10V, with RθJA = 62oC/W)
Pulsed
EAS
PD
TJ, TSTG
Unit
Figure 4
A
Single Pulse Avalanche Energy (Note 1)
475
mJ
Power dissipation
310
W
Derate above 25oC
Operating and Storage Temperature
2.0
W/oC
-55 to 175
C
o
Thermal Characteristics
Thermal Resistance Junction to Case, Max. TO-220, TO-247
RθJA
Thermal Resistance Junction to Ambient, Max. TO-220 (Note 2)
62
o
C/W
RθJA
Thermal Resistance Junction to Ambient, Max. TO-247 (Note 2)
30
o
C/W
©2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
1
0.48
oC/W
RθJC
www.fairchildsemi.com
FDP047AN08A0 / FDH047AN08A0 — N-Channel PowerTrench® MOSFET
October 2013
200
CURRENT LIMITED
BY PACKAGE
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
160
120
80
40
0.2
0
0
25
50
75
100
150
125
0
175
25
50
75
TC , CASE TEMPERATURE (oC)
100
125
150
175
TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
IDM, PEAK CURRENT (A)
1000
CURRENT AS FOLLOWS:
175 - TC
I = I25
VGS = 10V
150
100
50
10-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
3
www.fairchildsemi.com
FDP047AN08A0 / FDH047AN08A0 — N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
