FDP2570/FDB2570
150V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically for switching on the primary side in the
isolated DC/DC converter application. Any application
requiring a 150V MOSFETs with low on-resistance and
fast switching will benefit.
• 22 A, 150 V.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
• Fast switching speed
RDS(ON) = 80 mΩ @ VGS = 10 V
RDS(ON) = 90 mΩ @ VGS = 6 V
• Low gate charge (40nC typical)
• High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
• 175°C maximum junction temperature rating
D
D
G
G
D
G
S
TO-220
TO-263AB
FDP Series
S
FDB Series
Absolute Maximum Ratings
Symbol
S
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
150
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
A
– Continuous
(Note 1)
22
– Pulsed
(Note 1)
50
A
93
W
PD
Total Power Dissipation @ TC = 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Derate above 25°C
0.63
W°/C
–65 to +175
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
1.6
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDB2570
FDB2570
13’’
24mm
800 units
FDP2570
FDP2570
Tube
n/a
45 units
2001 Fairchild Semiconductor Corporation
FDP2570/FDB2570 Rev C(W)
FDP2570/FDB2570
August 2001
FDP2570/FDB2570
Typical Characteristics
1.6
ID, DRAIN CURRENT (A)
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
50
5.0V
4.5V
40
30
20
4.0V
10
1.4
VGS = 4.0V
4.5V
1.2
5.0V
10V
1
0.8
0
0
3
6
9
12
0
15
5
10
Figure 1. On-Region Characteristics.
20
25
30
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.9
0.35
ID = 5.5 A
ID = 11 A
VGS = 10V
2.5
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
15
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
2.1
1.7
1.3
0.9
0.5
0.3
0.25
0.2
TA = 125oC
0.15
0.1
TA = 25oC
0.05
0.1
-65
-35
-5
25
55
85
115
145
0
175
3
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
5
6
7
8
VGS, GATE TO SOURCE VOLTAGE (V)
9
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
IS, REVERSE DRAIN CURRENT (A)
50
VDS = 50V
ID, DRAIN CURRENT (A)
4
40
30
20
TA = 125oC
25oC
10
-55oC
2.5
3
3.5
4
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
2
VGS = 0V
10
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP2570/FDB2570 Rev C(W)
