FDP6030BL/FDB6030BL
N-Channel Logic Level PowerTrench MOSFET
General Description
Features
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
• 40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V
RDS(ON) = 0.024 Ω @ VGS = 4.5 V.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R DS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
• Critical DC electrical parameters specified at elevated
temperature.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• High performance trench technology for
extremely low RDS(ON).
• 175°C maximum junction temperature rating.
D
D
G
G
D
G
TO-220
S
FDP Series
S
TO-263AB
S
FDB Series
Absolute Maximum Ratings
Symbol
TC = 25°C unless otherwise noted
FDP6030BL
Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Maximum Drain Current
- Continuous
(Note 1)
V
V
A
120
Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ, TSTG
Units
30
±20
40
- Pulsed
PD
FDB6030BL
60
-65 to +175
W
W/°C
°C
0.36
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
2.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDB6030BL
FDB6030BL
13’’
24mm
800
FDP6030BL
FDP6030BL
Tube
N/A
45
2000 Fairchild Semiconductor International
FDP6030BL/FDB6030BL Rev.C
FDP6030BL/FDB6030BL
July 2000
FDP6030BL/FDB6030BL
Typical Characteristics
2.6
VGS = 10V
6.0V
5.0V
4.5V
70
60
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN-SOURCE CURRENT (A)
80
4.0V
50
40
3.5V
30
20
3.0V
10
2.4
2.2
VGS = 3.0V
2
1.8
3.5V
1.6
4.0V
1.4
5.0V
7.0V
1
10V
0.8
0
0
1
2
3
4
0
5
10
20
Figure 1. On-Region Characteristics.
40
50
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.06
1.8
ID = 20A
VGS = 10V
1.6
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
ID = 10 A
0.05
0.04
0.03
o
TA = 125 C
0.02
o
TA = 25 C
0.01
VGS = 0V
0.6
0
-50
-25
0
25
50
75
100
125
150
2
4
o
TJ, JUNCTION TEMPERATURE ( C)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
50
VGS = 0V
o
IS, REVERSE DRAIN CURRENT (A)
TA = -55 C
VDS = 5V
o
25 C
ID, DRAIN CURRENT (A)
4.5V
1.2
40
o
125 C
30
20
10
0
10
o
TA = 125 C
1
o
25 C
o
-55 C
0.1
0.01
0.001
0.0001
1
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDP6030BL/FDB6030BL Rev.C
