June 1998
FDR4420A
Single N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
Features
The SuperSOT-8 family of N-Channel Logic Level MOSFETs
have been designed to provide a low profile, small footprint
alternative to industry standard SO-8 little foot type product.
11 A, 30 V. RDS(ON) = 0.009 Ω @ VGS = 10 V,
RDS(ON) = 0.013 Ω @ VGS = 4.5 V.
These MOSFETs are produced using Fairchild Semiconductor's
advanced PowerTrench process that has been tailored to
minimize the on-state resistance and yet maintain superior
switching performance.
Fast switching speed.
These devices are well suited for low voltage and battery
powered applications where small package size is required
without compromising power handling and fast switching.
D
S
S
Small footprint 38% smaller than a standard SO-8.
Low profile package(1mm thick).
Power handling capability similar to SO-8.
SO-8
SOT-223
SOIC-16
5
D
44
20
pin 1
D
Absolute Maximum Ratings
D
D
3
7
2
8
G
4
6
A
SuperSOT TM-8
Symbol
SuperSOTTM-8
SuperSOTTM-6
SOT-23
Low gate charge.
1
TA = 25oC unless otherwise noted
Parameter
FDR4420A
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Draint Current - Continuous
(Note 1a)
11
A
PD
Maximum Power Dissipation
(Note 1a)
1.8
(Note 1b)
1
- Pulsed
40
(Note 1c)
TJ,TSTG
Operating and Storage Temperature Range
W
0.9
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
70
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
20
°C/W
© 1998 Fairchild Semiconductor Corporation
FDR4420 Rev.D
Typical Electrical Characteristics
VGS =10V
3
4.0V
3.5V
6.0V
24
R DS(ON) , NORMALIZED
32 4.5V
3.0V
16
8
2.5V
0
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
40
2.5
2
3.5
0.4
0.8
1.2
1.6
4.0
1.5
4.5
5.0
6.0
10
1
0.5
0
VGS = 3.0V
2
0
8
16
24
32
40
I D , DRAIN CURRENT (A)
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 2. On-Resistance Variation with
Figure 1. On-Region Characteristics.
Drain Current and Gate Voltage.
0.04
1.6
V GS =10V
R DS(ON) ,(OHM)
1.4
1.2
1
0.8
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
DRAIN-SOURCE ON-RESISTANCE
ID = 11A
0.6
-50
I D = 5.5A
0.035
0.03
0.025
0.02
0.015
T A = 125 o C
0.01
25 o C
0.005
Figure 3. On-Resistance Variation
2
4
6
8
VGS ,GATE-SOURCE VOLTAGE (V)
40
IS , REVERSE DRAIN CURRENT (A)
50
TJ = -55°C
VDS = 10V
25°C
125°C
40
10
Figure 4. On Resistance Variation with
Gate-To-Source Voltage.
with Temperature.
I D , DRAIN CURRENT (A)
R DS(ON) NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.8
30
20
10
VGS =0V
5
TJ = 125°C
1
25°C
0.1
-55°C
0.01
0.001
0.0001
0
1
1.5
V
GS
2
2.5
3
3.5
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDR4420 Rev.D
