FDR840P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET uses a rugged
gate PowerTrench process. It has been optimized for
power management applications with a wide range of
gate drive voltage (2.5V – 12V).
• –10 A, –20 V. RDS(ON) = 12 mΩ @ VGS = –4.5 V
RDS(ON) = 17.5 mΩ @ VGS = –2.5 V
• Fast switching speed.
Applications
• High performance trench technology for extremely
low RDS(ON)
• Power management
• Load switch
• High power and current handling capability
• Battery protection
D
S
5
D
TM
SuperSOT -8
D
2
8
1
D
Absolute Maximum Ratings
Symbol
3
7
G
4
6
D
S
o
TA=25 C unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current
–10
A
– Continuous
(Note 1a)
– Pulsed
–50
Power Dissipation for Single Operation
1.8
1.0
(Note 1c)
TJ, TSTG
(Note 1a)
(Note 1b)
PD
0.9
W
–55 to +150
°C
(Note 1a)
70
°C/W
(Note 1)
20
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDR840P
FDR840P
13’’
12mm
2500 units
2001 Fairchild Semiconductor Corporation
FDR840P Rev C1(W)
FDR840P
December 2000
FDR840P
Typical Characteristics
2
VGS = -4.5V
-3.0V
-3.5V
40
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN-SOURCE CURRENT (A)
50
-2.5V
-2.0V
30
20
10
-1.5V
VGS = -2.0V
1.8
1.6
1.4
-2.5V
-3.0V
1.2
-3.5V
-4.0V
-4.5V
1
0.8
0
0
0.5
1
1.5
0
2
10
20
Figure 1. On-Region Characteristics.
50
0.04
ID = -10A
VGS = -4.5V
1.3
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
40
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
1.2
1.1
1
0.9
0.8
ID = -5A
A
0.03
0.02
TA = 125oC
0.01
TA = 25oC
0
0.7
-50
-25
0
25
50
75
100
125
1
150
2
o
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
TA = -55oC
VDS = -5V
50
-IS, REVERSE DRAIN CURRENT (A)
60
-ID, DRAIN CURRENT (A)
30
- ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
25oC
125oC
40
30
20
10
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.5
1
1.5
2
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FD840P Rev C1(W)
