FDS3670
100V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
• 6.3 A, 100 V. RDS(ON) = 32 mΩ @ VGS = 10 V
RDS(ON) = 35 mΩ @ VGS = 6 V
• Low gate charge (57 nC typical)
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
D
• High power and current handling capability
D
5
6
SO-8
S
S
S
2
1
G
Absolute Maximum Ratings
Symbol
3
8
D
4
7
D
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
100
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
6.3
A
– Continuous
(Note 1a)
– Pulsed
PD
50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
(Note 1c)
TJ, TSTG
W
1.2
1.0
-55 to +150
°C
(Note 1a)
50
°C/W
(Note 1)
25
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS3670
FDS3670
13’’
12mm
2500 units
2000 Fairchild Semiconductor Corporation
FDS3670 Rev C(W)
FDS3670
November 2000
FDS3670
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Typical Characteristics
2
60
I D, DRAIN CURRENT (A)
50
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
5.0V
4.5V
V GS = 10V
5.5V
40
30
4.0V
20
10
1.8
1.6
VGS = 4.0V
1.4
4.5V
1.2
5.0V
5.5V 7.0V
10V
1
3.5V
0.8
0
0
1
2
3
4
0
5
10
20
Figure 1. On-Region Characteristics.
50
60
0.06
ID = 7.2A
VGS = 10V
2
ID = 3.6A
RDS(ON), ON-RESISTANCE (Ω )
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
40
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.05
TA = 125 oC
0.04
0.03
0.02
TA = 25oC
0.01
0
-50
-25
0
25
50
75
100
125
150
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
60
I S, REVERSE DRAIN CURRENT (A)
V GS = 0V
VDS = 5V
50
I D, DRAIN CURRENT (A)
30
I D, DIRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
40
30
125oC
20
25oC
10
TA = -55oC
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS3670 Rev C(W)
