FDS6690A
tm
Single N-Channel, Logic-Level, PowerTrench® MOSFET
General Description
Features
This N-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
• 11 A, 30 V.
RDS(ON) = 12.5 mΩ @ VGS = 10 V
RDS(ON) = 17.0 mΩ @ VGS = 4.5 V
• Fast switching speed
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
D
D
D
DD
D
D
5
6
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
3
7
2
8
G
S G
S
S
S S
S
SO-8
4
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
(Note 1a)
11
A
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.0
– Continuous
– Pulsed
50
EAS
Single Pulse Avalanche Energy
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 3)
W
96
mJ
–55 to +150
°C
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
125
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6690A
FDS6690A
13’’
12mm
2500 units
©2007 Fairchild Semiconductor Corporation
FDS6690A Rev E1 (W)
FDS6690A
February 2007
FDS6690A
Typical Characteristics
50
3
VGS = 10V
6.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
40
4.0V
3.5.V
4.5V
30
20
3.0V
10
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
3.5V
1.5
4.0V
4.5V
6.0V
10V
1
0
2
Figure 1. On-Region Characteristics.
10
20
30
ID, DRAIN CURRENT (A)
40
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
0.05
ID = 11.0A
VGS = 10V
1.6
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
0.5
0
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (oC)
150
ID = 5.5A
0.04
0.03
o
TA = 125 C
0.02
o
TA = 25 C
0.01
0
175
2
Figure 3. On-Resistance Variation with
Temperature.
100
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
40
30
20
o
TA = 125 C
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
ID, DRAIN CURRENT (A)
VGS = 3.0V
2.5
o
25 C
10
o
-55 C
VGS = 0V
10
o
TA = 125 C
1
o
25 C
0.1
0.01
o
-55 C
0.001
0.0001
0
1
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
3.5
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6690A Rev E1 (W)
