FHX35LG
Super Low Noise HEMT
FEATURES
• Low Noise Figure: 1.2B (Typ.)@f=12GHz
• High Associated Gain: 10.0dB (Typ.)@f=12GHz
• Lg ≤ 0.25µm, Wg = 280µm
• Gold Gate Metallization for High Reliability
• Cost Effective Ceramic Microstrip (SMT) Package
• Tape and Reel Packaging Available
DESCRIPTION
The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for
general purpose, low noise and high gain amplifiers in the 2-18GHz
frequency range. This device is packaged in cost effective, low parasitic,
hermetically sealed(LG) or epoxy-sealed(LP) metal-ceramic packages for
high volume telecommunication, DBS, TVRO, VSAT or other low noise
applications.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VDS
4.0
V
Gate-Source Voltage
VGS
-3.0
V
Pt*
290
mW
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Total Power Dissipation
*Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 3 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
IDSS
gm
Vp
VGSO
NF
Gas
Rth
Thermal Resistance
VDS = 2V, VGS = 0V
VDS = 2V, IDS = 10mA
VDS = 2V, IDS = 1mA
Min.
15
40
-0.2
IGS = -10µA
-3.0
Limit
Typ. Max.
40
85
60
-1.0
-2.0
-
VDS = 3V, IDS = 10mA
f = 12GHz
8.5
1.2
10.0
1.6
-
dB
dB
-
220
300
°C/W
Test Conditions
Channel to Case
AVAILABLE CASE STYLES: LG
Note: RF parameters are measured on a sample basis as follows:
1200
1201
3201
10001
Lot qty.
or
to
to
or
Edition 1.1
July 1999
less
3200
10000
over
Sample qty.
125
200
315
500
Accept/Reject
(0,1)
(0,1)
(1,2)
(1,2)
1
Unit
mA
mS
V
V
FHX35LG
Super Low Noise HEMT
NF & Gas vs. IDS
20
Gas
2
10
NF
1
5
3
Noise Figure (dB)
15
3
Associated Gain (dB)
Noise Figure (dB)
VDS=3V
IDS=10mA
12
f=12GHz
VDS=3V
11
Gas
10
2
9
8
NF
7
1
0
4
6
8 10 12
0
18 20
10
Frequency (GHz)
OUTPUT POWER vs. INPUT POWER
15
1.5
10
1.0
5
NF
Output Power (dBm)
Gas
25
Associated Gain (dB)
Noise Figure (dB)
f=12GHz
VDS=3V
IDS=10mA
30
Drain Current (mA)
NF & Gas vs. TEMPERATURE
2.0
20
f=12GHz
VDS=3V
IDS=15mA
15
10
5
0
100
200
300
-5
400
0
5
Input Power (dBm)
Ambient Temperature (°K)
3
10
Associated Gain (dB)
NF & Gas vs. FREQUENCY
