VEC2607
Ordering number : ENN8359
VEC2607
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
•
•
•
•
The best suited for inverter applications.
The VEC2607 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
thereby enabling high-density mounting.
Low voltage drive.
Mounting height 0.75mm.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
20
-12
V
Gate-to-Source Voltage
VGSS
±10
±8
V
4.5
--4
A
18
-16
Drain Current (DC)
ID
IDP
PD
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
PT
Tch
Storage Temperature
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2!0.8mm)1unit
0.9
Mounted on a ceramic board (900mm2!0.8mm)
Tstg
A
W
1.0
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=20V, VGS=0V
20
V
1
±10
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2.5A
4.5
µA
1.3
0.5
µA
V
Forward Transfer Admittance
VGS(off)
yfs
ID=2A, VGS=4V
ID=1A, VGS=2.5V
32
42
mΩ
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
40
57
mΩ
ID=0.3A, VGS=1.8V
VDS=10V, f=1MHz
55
80
mΩ
Input Capacitance
RDS(on)3
Ciss
570
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
110
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
80
pF
Marking : CA
7.5
S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005PE MS IM TB-00001478 No.8359-1/6
