SUP/SUB70N03-09BP
New Product
Vishay Siliconix
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
0.009 @ VGS = 10 V
70a
0.013 @ VGS = 4.5 V
30
ID (A)
60
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
S
SUB70N03-09BP
Top View
N-Channel MOSFET
SUP70N03-09BP
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"20
TC = 100_C
Pulsed Drain Current
Repetitive Avalanche
ID
50
IDM
Energya
200
IAR
Avalanche Current
V
70b
TC = 25_C
Continuous Drain Current (TJ = 175_C)
_
Unit
A
30
L = 0.1 mH
EAR
61
mJ
TC = 25_C
PD
93b
W
TJ, Tstg
–55 to 175
_C
Symbol
Power Dissipation
Limit
Unit
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)c
Junction-to-Ambient
Junction-to-Case
Free Air (TO-220AB)
40
RthJA
RthJC
62.5
_C/W
1.6
Notes:
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71229
S-20102—Rev. B, 11-Mar-02
www.vishay.com
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