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PBSS4041SPN
PBSS4041SPN 60 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 — 20 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number NXP PBSS4041SPN Package Name NPN/NPN complement SOT96-1 SO8 PNP/PNP complement PBSS4041SN PBSS4041SP 1.2 Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit open base - - 60 V - - 6.7 A - - 15 A - 32 48 mΩ TR1; NPN low VCEsat transistor VCEO collector-emitter voltage IC collector current ICM peak collector current RCEsat collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 4 A; IB = 0.2 A [1]
NXP
NXP Semiconductors
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