2SK209
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK209
Audio Frequency Low Noise Amplifier Applications
•
•
High breakdown voltage: VGDS = −50 V
•
Unit: mm
High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0
Low noise: NF = 1.0dB (typ.)
at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ
•
High input impedance: IGSS = −1 nA (max) at VGS = −30 V
•
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VGDS
−50
V
Gate current
IG
10
mA
Drain power dissipation
PD
150
mW
Junction temperature
Tj
125
°C
Tstg
−55 to 125
°C
Gate-drain voltage
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
JEDEC
TO-236
JEITA
SC-59
TOSHIBA
2-3F1B
Weight: 0.012 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = −30 V, VDS = 0
⎯
⎯
−1.0
nA
V (BR) GDS
VDS = 0, IG = −100 μA
−50
⎯
⎯
V
1.2
⎯
14.0
mA
VDS = 10 V, ID = 0.1 μA
−0.2
⎯
−1.5
V
mS
IDSS
VDS = 10 V, VGS = 0
(Note)
Gate-source cut-off voltage
VGS (OFF)
Forward transfer admittance
⎪Yfs⎪
VDS = 10 V, VGS = 0, f = 1 kHz
4.0
15
⎯
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
13
⎯
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
⎯
3
⎯
pF
⎯
5
⎯
dB
⎯
1
⎯
dB
Noise figure
NF (1)
Noise figure
NF (2)
VDS = 10 V, RG = 1 kΩ
ID = 0.5 mA, f = 10 Hz
VDS = 10 V, RG = 1 kΩ
ID = 0.5 mA, f = 1 kHz
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA
Marking
Start of commercial production
1981-06
1
2014-03-01
