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DTB113ESTP
DTB113EK / DTB113ES Transistors -500mA / -50V Digital transistors (with built-in resistors) DTB113EK / DTB113ES Applications Inverter, Interface, Driver External dimensions (Unit : mm) DTB113EK 2.9 Feature 1) Built-in bias resistors enable theconfiguration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making the device design easy. 1.1 0.4 0.8 1.6 2.8 (3) (2) 0.15 1.9 ROHM : SMT3 EIAJ : SC-59 Structure PNP epitaxial planar silicon transistor (Resistor built-in type) 0.3Min. (1) 0.95 0.95 (1) GND (2) IN (3) OUT Each lead has same dimension Abbreviated symbol : F11 DTB113ES 2.0 3Min. 3.0 4.0 Package SMT3 SPT Packaging type Taping TP Code Basic ordering unit (pieces) Part No. 0.45 Taping T146 (15Min.) Packaging specifications 3000 0.45 (1) GND (2) OUT (3) IN Abbreviated symbol : B113ES − − Absolute maximum ratings (Ta=25°C) Parameter 0.5 (1) (2) (3) ROHM : SPT EIAJ : SC-72 5000 DTB113EK DTB113ES 2.5 5.0 Equivalent circuit Limits Symbol Unit DTB113EK DTB113ES OUT R1 Supply voltage VCC −50 V Input voltage VIN −10 to +10 V Output current IC −500 mA Power dissipation PD Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 IN C 200 300 R2 GND(+) mW OUT IN GND(+) R1=R2=1.0kΩ Rev.A 1/2
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