CUS03
TOSHIBA Schottky Barrier Rectifier
Schottky Barrier Type
CUS03
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
•
Unit: mm
1.25 + 0.2
− 0.1
Forward voltage: VFM = 0.52 V@IF = 0.7 A
0.13 + 0.05
− 0.03
0.88 ± 0.1
•
Average forward current: IF (AV) = 0.7 A
•
Repetitive peak reverse voltage: VRRM = 40 V
•
Suitable for high-density board assembly due to the use of a small
surface-mount package, US−FLATTM
1.9 ± 0.1
2.5 ± 0.2
②
Absolute Maximum Ratings (Ta = 25°C)
Unit
Repetitive peak reverse voltage
VRRM
40
V
Average forward current
IF (AV)
0.7
(Note 1)
A
Junction temperature
Storage temperature range
Note 1: Ta = 53°C:
IFSM
20 (50 Hz)
A
Tj
(Non-repetitive)
−40 to 150
°C
Tstg
−40 to 150
0.6 ± 0.1
°C
Device mounted on a glass-epoxy board
Board size: 50 mm × 50 mm,
Land size: 6 mm × 6 mm
Rectangular waveform (α = 180°), VR = 20 V
① ANODE
② CATHODE
0.5 ± 0.1
Peak one cycle surge forward current
0.88 ± 0.1
1.4 ± 0.2
Rating
0 ~ 0.05
Symbol
0.6 ± 0.1
Characteristics
①
0.6 ± 0.1
0.78 ± 0.1
0.6 ± 0.1
JEDEC
―
JEITA
―
TOSHIBA
3-2B1A
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
Weight: 0.004 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance
(junction to ambient)
Thermal resistance (junction to lead)
Symbol
Test Condition
Min
Typ.
Max
VFM (1)
IFM = 0.1 A
―
0.37
―
VFM (2)
IFM = 0.7 A
―
0.48
0.52
IRRM (1)
VRRM = 5 V
―
0.4
―
IRRM (2)
VRRM = 40 V
―
3.0
100
VR = 10 V, f = 1.0 MHz
―
45
―
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
(board thickness: 0.64 mm)
―
―
75
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
(board thickness: 1.6 mm)
―
―
150
Junction to lead of cathode side
―
―
30
Unit
Cj
Rth (j-a)
Rth (j-ℓ)
1
V
μA
pF
°C/W
°C/W
2008-05-13
