Switching Diodes
MA3X198 (MA198)
Silicon epitaxial planar type
For wave detection
■ Package
• Two elements contained in one package, allowing high-density
mounting
• Soft recovery characteristic (trr = 100 ns)
• Code
Mini3-G1
• Pin Name
1: Anode 1
2: Cathode 2
3: Cathode 1, Anode 2
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■ Features
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Reverse voltage
Rating
Repetitive peak reverse voltage
Forward current
(Average)
Single
Repetitive peak
forward current
Single
Non-repetitive peak
forward surge current*
Single
VRRM
Unit
40
VR
V
40
Series
V
100
IF(AV)
■ Marking Symbol: M2F
mA
■ Internal Connection
75
IFRM
225
Series
3
mA
170
IFSM
500
Series
mA
1
325
150
Junction temperature
Storage temperature
Tstg
Note) *: t = 1 s
°C
−55 to +150
Tj
2
°C
Symbol
ce
/D
isc
on
tin
Parameter
Forward voltage
ue
■ Electrical Characteristics Ta = 25°C ± 3°C
VF1
VF2
IR
time*
Ct
trr
Ma
int
Reverse recovery
en
Terminal capacitance
an
Reverse current
Conditions
Min
IF = 100 µA
Typ
Max
Unit
0.72
0.65
V
IF = 100 mA
1.2
V
VR = 40 V
10
nA
2.0
pF
100
ns
VR = 6 V, f = 1 MHz
1.0
IF = 10 mA, VR = 6 V
Irr = 0.1 IR, RL = 100 Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Output Pulse
t
IF
trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: December 2007
SKF00041EED
1
