Data Sheet
Fast Recovery Diode
RF501B2S
Dimensions(Unit : mm )
Land size figure(Unit : mm)
6.0
Features
1) Power mold type.(CPD)
2) High reliability
3) Low VF
1.6
CPD
4) Very fast recovery
5) Low switching loss
1.6
3.0 2.0
6.0
Applications
General rectification
2.3 2.3
Structure
Construction
Silicon epitaxial planar
(2)
(1)
(3)
Taping specifications(Unit : mm)
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
200
VRM
200
VR
5
Io
Forward current surge peak (60Hz / 1cyc)(*1)
40
IFSM
Junction temperature
150
Tj
Storage temperature
55 to 150
Tstg
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=128C
Unit
V
V
A
A
°C
°C
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Electrical characteristics(Ta=25C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
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Symbol
VF
Min.
Typ.
Max.
Unit
-
0.86
0.92
V
IR
-
0.015
1
μA
trr
-
15
30
ns
1/3
Conditions
IF=5A
VR=200V
IF=0.5A,IR=1A,Irr=0.25*I R
2011.05 - Rev.G