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TIM5359-80SL
MICROWAVE POWER GaAs FET TIM5359-80SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level HIGH POWER P1dB=49.0dBm at 5.3GHz to 5.9GHz HIGH GAIN G1dB=7.5dB at 5.3GHz to 5.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB CONDITIONS UNIT dBm MIN. 48.0 G1dB VDS= 10V IDSset≅10.0A f = 5.3 to 5.9GHz dB 7.5 8.5 ⎯ A dB % dBc ⎯ ⎯ ⎯ -25 18.0 20.0 ±0.8 A °C ⎯ ⎯ ⎯ ⎯ 16.0 100 UNIT S MIN. MAX. ⎯ TYP. 20 V -1.0 -1.8 -3.0 A ⎯ 38 ⎯ V -5 ⎯ ⎯ °C/W ⎯ 0.5 0.6 IDS1 ΔG ηadd IM3 IDS2 ΔTch Two-Tone Test Po=42.0dBm (Single Carrier Level) (VDS X IDS +Pin-P1dB) X Rth(c-c) Recommended Gate Resistance(Rg) : 28 Ω ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance ( Ta= 25°C ) ⎯ ⎯ ( Ta= 25°C ) Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO Rth(c-c) Channel to Case VGSoff ⎯ 38 -30 (Max.) CONDITIONS VDS= 3V IDS= 12.0A VDS= 3V IDS= 200mA VDS= 3V VGS= 0V IGS= -1.0mA Pinch-off Voltage SYMBOL gm TYP. MAX. 49.0 ⎯ ⎯ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Aug. 2008
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